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Proceedings Paper

Optical properties and modeling of flash VUV-induced silicon oxynitride isotropic deposition that is water and hydroxyl free
Author(s): Jean Flicstein; J. Mba; J.-M. Le Solliec; Jean Francois Palmier
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Paper Abstract

SiOxNy for micro- and optoelectronics is obtained from low-pressure vapor deposition reaction induced by a novel flash lamp which irradiates a precursor mixture NH3/SiH4/N2O in deep ultraviolet (160 - 260 nm) and IR. Amorphous thin films are resulted within the composition of silicon oxynitride. Flow ratio of precursors and flashtubes were varied to produce a range of x and y. The detailed properties have been investigated using ellipsometry, infrared absorption, auger electron spectroscopy, and atomic force microscope. The hydrogen concentrations, as N-H bonds, were low, in the range (2 - 5)1023 H atoms.cm-3. All samples deposited at 400 degrees Celsius are isotropic and homogeneous in hydrogen content. No absorption bands of O-H, Si-H and H2O are detected in the range of the FTIR spectra. A Monte Carlo type model is well adapted to simulate the morphology tendencies for SiOxNy film isotropy improvement.

Paper Details

Date Published: 2 April 1997
PDF: 11 pages
Proc. SPIE 3091, Laser Applications Engineering (LAE-96), (2 April 1997); doi: 10.1117/12.271778
Show Author Affiliations
Jean Flicstein, France Telecom/CNET (France)
J. Mba, France Telecom/CNET (France)
J.-M. Le Solliec, France Telecom/CNET (France)
Jean Francois Palmier, France Telecom/CNET (France)


Published in SPIE Proceedings Vol. 3091:
Laser Applications Engineering (LAE-96)
Vadim P. Veiko, Editor(s)

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