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Proceedings Paper

Photoelectrical properties of nonuniform GaAs structures under infrared laser illumination
Author(s): Steponas P. Asmontas; Jonas Gradauskas; Dalius Seliuta; A. Silenas; Edmundas Sirmulis; I. Ya. Marmur
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Paper Abstract

We report our results of experimental study of photoelectrical properties of GaAs p-n and l-h junctions illuminated with pulsed carbon-dioxide laser light. The current-voltage and voltage-power characteristics are investigated. It is demonstrated that photoemission of hot carriers across the potential barrier and the crystal lattice heating are the dominant mechanisms in the photovoltage formation. The obtained results show that hot- carrier effects in inhomogeneous GaAs can be used to detect very short infrared laser pulses.

Paper Details

Date Published: 4 April 1997
PDF: 6 pages
Proc. SPIE 3093, Nonresonant Laser-Matter Interaction (NLMI-9), (4 April 1997); doi: 10.1117/12.271703
Show Author Affiliations
Steponas P. Asmontas, Semiconductor Physics Institute (Lithuania)
Jonas Gradauskas, Semiconductor Physics Institute (Lithuania)
Dalius Seliuta, Semiconductor Physics Institute (Lithuania)
A. Silenas, Semiconductor Physics Institute (Lithuania)
Edmundas Sirmulis, Institute of Physics (Lithuania)
I. Ya. Marmur, S.I. Vavilov State Optical Institute (Russia)


Published in SPIE Proceedings Vol. 3093:
Nonresonant Laser-Matter Interaction (NLMI-9)
Vitali I. Konov; Mikhail N. Libenson, Editor(s)

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