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Proceedings Paper

Electrothermal defect generation and optical damage in a transparent medium
Author(s): Vladimir L. Komolov
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Paper Abstract

A model description of the laser-induced free carriers influence upon the point defect generation and optical damage in the wide-gap semiconductors and dielectrics is presented. The model is based on the following assertions: (1) The defect creation probability in solid considerably increases compared with its usual temperature-fluctuation value if the free carriers are involved in defect generation process (so-called recombination-stimulated defect reactions); (2) The point defect creation in crystal resulting in energy spectrum transformation leads to free carriers generation in solid even without the lattice heating. The positive feedback between free carrier and point defect concentrations stimulates the fast increase both carrier and defect densities and under certain conditions results in optical damage of crystal. The conducted analysis makes it possible to assert that: (1) The optical damage of transparent solids is often due to the electron-stimulated defect reactions arising under the wide range of light irradiation parameters; (2) The above mentioned process of the defect generation must be taken into account in the analysis of 'accumulative effects' in low absorbing media under multiple laser action with sub- threshold intensities.

Paper Details

Date Published: 4 April 1997
PDF: 9 pages
Proc. SPIE 3093, Nonresonant Laser-Matter Interaction (NLMI-9), (4 April 1997); doi: 10.1117/12.271659
Show Author Affiliations
Vladimir L. Komolov, S.I. Vavilov State Optical Institute (Russia)


Published in SPIE Proceedings Vol. 3093:
Nonresonant Laser-Matter Interaction (NLMI-9)
Vitali I. Konov; Mikhail N. Libenson, Editor(s)

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