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Proceedings Paper

Very-high-speed low-driving-voltage MQW modulator modules
Author(s): Koichi Wakita
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Paper Abstract

Very-low-driving-voltage (less than 1 Vpp) electroabsorption modulators operating at 40-Gbit/s NRZ large-signal modulation have been fabricated using strained InGaAlAs/InAlAs multiple quantum wells (MQWs). The optimum structure has been discussed with strain magnitude in the wells as a parameter, based on a figure of merit that is defined as the ratio of 3 dB bandwidth to the driving voltage. Blue chirp operation for low insertion loss with prebias has been demonstrated in addition to polarization insensitivity.

Paper Details

Date Published: 10 April 1997
PDF: 6 pages
Proc. SPIE 3038, High-Speed Semiconductor Lasers for Communication, (10 April 1997); doi: 10.1117/12.271464
Show Author Affiliations
Koichi Wakita, NTT Opto-electronics Labs. (Japan)


Published in SPIE Proceedings Vol. 3038:
High-Speed Semiconductor Lasers for Communication
Norman S. Kwong; Radhakrishnan Nagarajan, Editor(s)

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