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Proceedings Paper

Ferroelectric PZT thin films on Si and SBN substrates
Author(s): Ratnakar R. Neurgaonkar; Jeffrey G. Nelson; Joey Lin; James Cheng
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Paper Abstract

The sol-gel technique has been used to produce perovskite PZT thin films on lattice-matched SBN:60 and LaAlO3 substrates. These films were spin-coated and then annealed in the range of 500-700 degrees C in an oxygen atmosphere. Highly grain oriented films showed high polarization and the potential for a large electro-optic response.In all cases, the PZT thin films were highly crystalline, with dielectric constants > 1300. PZT films were also deposited on Pt- metallized Si using the same deposition technique in order to establish the effect of annealing conditions on the formation of pyrochlore phase.

Paper Details

Date Published: 11 April 1997
PDF: 9 pages
Proc. SPIE 3008, Miniaturized Systems with Micro-Optics and Micromechanics II, (11 April 1997); doi: 10.1117/12.271434
Show Author Affiliations
Ratnakar R. Neurgaonkar, Rockwell Science Ctr. (United States)
Jeffrey G. Nelson, Rockwell Science Ctr. (United States)
Joey Lin, Rockwell Science Ctr. (United States)
James Cheng, Rockwell Science Ctr. (United States)

Published in SPIE Proceedings Vol. 3008:
Miniaturized Systems with Micro-Optics and Micromechanics II
M. Edward Motamedi; Larry J. Hornbeck; Kristofer S. J. Pister, Editor(s)

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