Share Email Print

Proceedings Paper

New intensity GaAs electro-optic modulator realized by intersecting waveguides
Author(s): Beniamino Castagnolo; Maria Rizzi; Zhene Xu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O+ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as anti-waveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. By the use of carrier induced refractive index modeling and the finite difference beam propagation method simulation, good performance and small injection current of this modulator are predicted.

Paper Details

Date Published: 11 April 1997
PDF: 9 pages
Proc. SPIE 3008, Miniaturized Systems with Micro-Optics and Micromechanics II, (11 April 1997); doi: 10.1117/12.271431
Show Author Affiliations
Beniamino Castagnolo, Politecnico di Bari (Italy)
Maria Rizzi, Politecnico di Bari (Italy)
Zhene Xu, Politecnico di Bari (Italy)

Published in SPIE Proceedings Vol. 3008:
Miniaturized Systems with Micro-Optics and Micromechanics II
M. Edward Motamedi; Larry J. Hornbeck; Kristofer S. J. Pister, Editor(s)

© SPIE. Terms of Use
Back to Top