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Proceedings Paper

Sb-based infrared materials and photodetectors for the near-room-temperature applications
Author(s): Jedon D. Kim; Erick J. Michel; H. Mohseini; Joseph S. Wojkowski; J. J. Lee; Manijeh Razeghi
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Paper Abstract

We report on the growth of InSb, InAsSb, and InTlSb alloys for infrared photodetector applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The materials and detector structures were grown on (100) and (111)B semi-insulating GaAs and GaAs coated Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. Photoconductive detectors fabricated from InAsSb and InTlSb have been operated in the temperature range from 77 K to 300 K. The material parameters for photovoltaic device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with 77 K peak responsivities approximately 103 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10-2 V/W at 8 micrometers . The RoA product of InAsSb detectors has been theoretically and experimentally analyzed.

Paper Details

Date Published: 15 April 1997
PDF: 12 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271212
Show Author Affiliations
Jedon D. Kim, Northwestern Univ. (United States)
Erick J. Michel, Northwestern Univ. (United States)
H. Mohseini, Northwestern Univ. (United States)
Joseph S. Wojkowski, Northwestern Univ. (United States)
J. J. Lee, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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