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Proceedings Paper

Nonlinear photoresponse of quantum well infrared photodetectors at high-excitation power
Author(s): Maxim Ershov; Hui Chun Liu; Margaret Buchanan; Zbigniew R. Wasilewski
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Paper Abstract

Nonlinear photoresponse effects at high excitation power in quantum well infrared photodetectors (QWIPs) are studied both experimentally and theoretically. The photoconductivity nonlinearity is mainly caused by a redistribution of the electric potential at high power, which leads to a decrease of electric field in the bulk of the QWIP. As a result of the decreased field, the photoexcited electron escape probability and drift velocity decrease, resulting in a decrease of responsivity. These effects are strongly influenced by QWIP structural parameters and operating conditions. In QWIPs with a few QWs the IR power required to observe a decrease of responsivity is much lower than that needed to cause the saturation of the intersubband absorption. Key factors in designing a QWIP with a suppressed nonlinearity are discussed.

Paper Details

Date Published: 15 April 1997
PDF: 8 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271210
Show Author Affiliations
Maxim Ershov, Univ. of Aizu (United States)
Hui Chun Liu, National Research Council of Canada (Canada)
Margaret Buchanan, National Research Council of Canada (Canada)
Zbigniew R. Wasilewski, National Research Council of Canada (Canada)


Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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