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Proceedings Paper

Intrinsic AlxGa1-xN photodetectors for the entire compositional range
Author(s): Danielle Walker; Xiaolong Zhang; Adam W. Saxler; Patrick Kung; Jianren Xu; Manijeh Razeghi
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Paper Abstract

AlxGa1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 X 108 cm X Hz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.

Paper Details

Date Published: 15 April 1997
PDF: 8 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271200
Show Author Affiliations
Danielle Walker, Northwestern Univ. (United States)
Xiaolong Zhang, Northwestern Univ. (United States)
Adam W. Saxler, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Jianren Xu, Semiconductor Laser International (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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