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Proceedings Paper

GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
Author(s): Zane A. Shellenbarger; Michael G. Mauk; Mark Gottfried; Joseph D. Lesko; Louis C. DiNetta
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Paper Abstract

Progress on mid-IR photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb and InAsSbP on GaSb substrates is reported. Both p/n junction and avalanche photodiode structures were fabricated. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. Room temperature detectivity of 1.85 X 108 cmHz1/2/W was measured for GaInAsSb detectors, while room-temperature avalanche multiplication gain of 20 was measured on AlGaAsSb/GaInAsSb avalanche photodiodes. Infrared p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 micrometers and 4.4 micrometers respectively.

Paper Details

Date Published: 15 April 1997
PDF: 9 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271198
Show Author Affiliations
Zane A. Shellenbarger, AstroPower Inc. (United States)
Michael G. Mauk, AstroPower Inc. (United States)
Mark Gottfried, AstroPower Inc. (United States)
Joseph D. Lesko, AstroPower Inc. (United States)
Louis C. DiNetta, AstroPower Inc. (United States)

Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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