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Proceedings Paper

AlGaN ultraviolet detectors
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Paper Abstract

Hitherto, the semiconductor ultraviolet (UV) detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to anew generation of UV detectors fabricated from wide-band-gap semiconductors between them the most promising are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is described in detail.

Paper Details

Date Published: 15 April 1997
PDF: 12 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271196
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Antoni Rogalski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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