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Proceedings Paper

InP photodetectors for millimeter wave applications based on edge-coupled heterojunction phototransistors
Author(s): Jerome Van de Casteele; Vincent Magnin; Jean-Philippe Gouy; Jean-Pierre Vilcot; Joseph Harari; Sophie Maricot; Didier J. Decoster
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Paper Abstract

In this paper, we present first experimental results obtained on two and three tenninal edge-coupled InPfInGaAs heterojunction phototransistors showing that these devices seem very promising for microwave and millimeter wave applications. Keywords : phototransistor , heterojunction, edge-coupled, microwave, millimeter wave, GaInAS/InP, photodetector

Paper Details

Date Published: 15 April 1997
PDF: 7 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271188
Show Author Affiliations
Jerome Van de Casteele, Domaine Univ. et Scientifique de Villeneuve d'Ascq (France)
Vincent Magnin, Domaine Univ. et Scientifique de Villeneuve d'Ascq (France)
Jean-Philippe Gouy, Domaine Univ. et Scientifique de Villeneuve d'Ascq (France)
Jean-Pierre Vilcot, Domaine Univ. et Scientifique de Villeneuve d'Ascq (France)
Joseph Harari, Domaine Univ. et Scientifique de Villeneuve d'Ascq (France)
Sophie Maricot, Domaine Univ. et Scientifique de Villeneuve d'Ascq (France)
Didier J. Decoster, Domaine Univ. et Scientifique de Villeneuve d'Ascq (France)


Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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