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Proceedings Paper

Very long wavelength GaAs/GaInP quantum well infrared photodetectors
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Paper Abstract

We demonstrate long wavelength quantum well infrared photodetectors with GaAs quantum wells and GaInP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 angstrom, which resulted in a detection peak at 13 micrometers and a cutoff wavelength of 15 micrometers . Dark current measurements of the samples with 15 micrometers cutoff wavelength show low dark current densities. The dark current characteristics have been investigated as a function of temperature and electron density in the well and compared to a model which takes into account thermionic emission and thermally assisted tunneling. The model is used to extract a saturation velocity of 1.5 X 105 cm/s for electrons. The photoelectron lifetime before recapture has been deduced from this carrier velocity and photoconductive gain measurements. The lifetime is found to be approximately 5 ps. Preliminary focal plane array imaging is demonstrated.

Paper Details

Date Published: 15 April 1997
PDF: 9 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271184
Show Author Affiliations
Christopher Louis Jelen, Northwestern Univ. (United States)
Steven Slivken, Northwestern Univ. (United States)
Gail J. Brown, Air Force Wright Lab. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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