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Proceedings Paper

Radiative lifetime in semiconductors: influence of photon recycling
Author(s): Christoph H. Grein; Henry Ehrenreich; E. Runge
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Paper Abstract

A microscopic theory of radiative recombination including the effects of photon reabsorption has ben developed which does not make the traditional assumptions of spherical constant energy surfaces, Maxwell-Boltzmann statistics for carriers, and constant momentum matrix elements. Numerical results illustrating the effects of photon recycling will be discussed for superlattice and bulk infrared detector materials. The calculations employ realistic K.p band structures and matrix elements. The lifetime enhancement can be greater than an order of magnitude.

Paper Details

Date Published: 15 April 1997
PDF: 8 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271179
Show Author Affiliations
Christoph H. Grein, Univ. of Illinois/Chicago (United States)
Henry Ehrenreich, Harvard Univ. (United States)
E. Runge, Max-Planck-Arbeitsgruppe Halbleitertheorie (Germany)


Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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