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Proceedings Paper

Improved performance III-V quantum well IR photodetectors: review of current and potential focal plane technology
Author(s): Lewis T. Claiborne
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Paper Abstract

The maturation of the III-V materials technology has provided an opportunity for the development of a producible and affordable class of IR detector arrays. Designs based on the GaAs compounds permit the realization of multiple quantum well IR photodetectors (QWIPs) which are useful for long wavelength focal plane arrays with sizes demonstrated up to 640 X 480. Similar designs using InP based materials can cover an even broader IR spectral region with lattice matched structures. QWIP demonstrations have been made for midwave detectors and very long wave detectors as well. New detector structures that improve optical performance and reduce bias current can lead to higher performance QWIPs which approach the performance of mercury cadmium telluride at moderate operating temperatures. These developments offer the possibility of practical, large, affordable IR focal plane arrays in the near future.

Paper Details

Date Published: 15 April 1997
PDF: 9 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271178
Show Author Affiliations
Lewis T. Claiborne, Lockheed Martin Vought Systems (United States)


Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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