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Proceedings Paper

Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy
Author(s): Jody Alperin; Qinghong Du; Wen I. Wang
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Paper Abstract

We report normal incidence infrared electroabsorption modulation utilizing the Stark effect to induce (Gamma) -L transitions in asymmetric AlSb/InAs/Al0.4Ga0.6Sb/GaSb/AlSb quantum wells on a undoped GaSb substrate grown by molecular beam epitaxy. The normal incidence measurements of the fabricated devices were performed under various electric fields at T equals 77K using a Fourier transform infrared spectrometer. The modulation absorption was found to be directly proportional to applied bias. The largest infrared absorption at 5 micrometers with an absorption coefficient of 3200 cm-1 was obtained at 14 V reverse bias. Our results indicate the potential of this novel structure for application in normal incidence modulators.

Paper Details

Date Published: 15 April 1997
PDF: 4 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271177
Show Author Affiliations
Jody Alperin, Columbia Univ. (United States)
Qinghong Du, Columbia Univ. (United States)
Wen I. Wang, Columbia Univ. (United States)

Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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