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Proceedings Paper

Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures
Author(s): Eric K. Lindmark; John P. Prineas; Galina Khitrova; Hyatt M. Gibbs; Oleg B. Gusev; Boris J. Ber; Mikhail S. Bresler; Irina N. Yassievich; B. P. Zakharchenya; V. F. Masterov
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Paper Abstract

Erbium was introduce into GaAs/AlGaAs quantum well structures in the process of growth by MBE in an attempt to enhance semiconductor-Er transfer by means of a resonance between quantum well and Er ion transitions. Instead the quantum well was washed out by efficient interdiffusion of Ga and Al and diffusion of Er. We have demonstrated also that erbium interacts with aluminum in arsenides; this interaction leads to the formation of Er-containing Al- enriched clusters.

Paper Details

Date Published: 2 May 1997
PDF: 6 pages
Proc. SPIE 2996, Rare-Earth-Doped Devices, (2 May 1997); doi: 10.1117/12.271154
Show Author Affiliations
Eric K. Lindmark, Optical Sciences Ctr./Univ. of Arizona (United States)
John P. Prineas, Optical Sciences Ctr./Univ. of Arizona (United States)
Galina Khitrova, Optical Sciences Ctr./Univ. of Arizona (United States)
Hyatt M. Gibbs, Optical Sciences Ctr./Univ. of Arizona (United States)
Oleg B. Gusev, A.F. Ioffe Physical Technical Institute (Russia)
Boris J. Ber, A.F. Ioffe Physical Technical Institute (Russia)
Mikhail S. Bresler, A.F. Ioffe Physical Technical Institute (Russia)
Irina N. Yassievich, A.F. Ioffe Physical Technical Institute (Russia)
B. P. Zakharchenya, A.F. Ioffe Physical Technical Institute (Russia)
V. F. Masterov, Technical Univ. St. Petersburg (Russia)


Published in SPIE Proceedings Vol. 2996:
Rare-Earth-Doped Devices
Seppo Honkanen, Editor(s)

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