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Proceedings Paper

Rigorous scalar modeling of Er- and Er/Yb-doped waveguide lasers
Author(s): David L. Veasey; John M. Gary; J Amin
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Paper Abstract

A rigorous scalar model for predicting the characteristics of rare-earth-doped waveguide lasers has been developed. The model consists of two nonhomogeneous wave equations: one for the forward-propagating laser signal power, the other for the backward-propagating laser signal. These equations are coupled with one forward-propagating, nonhomogeneous wave equation representing the pump signal. The three wave equations are coupled with the space dependent laser rate equations to form a system of time dependent differential equations. This large system of equations is solved, using appropriate initial and boundary conditions, by the method of lines using collocation for the spatial approximation. The solutions to this system yield data which predict the time and position-dependent laser signal power, pump power, and population densities in a waveguide laser cavity supporting an arbitrary guided mode. The assumptions made in this new model are that the transverse field maintains the same shape as a function of longitudinal position in the laser cavity and that the effects of spatial hole burning and standing waves are neglected. We have used this model to predict continuous wave and Q-switched laser performance for Er an Er/Yb-doped lasers. We have achieved favorable comparisons with actual laboratory operation of cw Yb/Er-co- doped waveguide lasers. Results from simulations of Er-doped and Yb/Er-doped Q-switched lasers are presented which show that high peak powers on the order of 500 W and 1 ns pulse widths can be achieved.

Paper Details

Date Published: 2 May 1997
PDF: 12 pages
Proc. SPIE 2996, Rare-Earth-Doped Devices, (2 May 1997); doi: 10.1117/12.271150
Show Author Affiliations
David L. Veasey, National Institute of Standards and Technology (United States)
John M. Gary, National Institute of Standards and Technology (United States)
J Amin, National Institute of Standards and Technology (United States)

Published in SPIE Proceedings Vol. 2996:
Rare-Earth-Doped Devices
Seppo Honkanen, Editor(s)

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