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Proceedings Paper

64-Gbit/s GaAs integrated DANE receiver/laser driver
Author(s): Wei-Heng Chang; Jinghui Mu; Mitchell D. Heins; Milton Feng; Jongwoo Kim; David S. McCallum; Richard V. Stone; Peter S. Guilfoyle
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Paper Abstract

Optical interconnects provide wide bandwidth, lowloss, and high fanout as compared to those for traditional electrical interconnects. In the past years many high performance optoelectronic circuits have been demonstrated. However, most of them require complicated process and exotic devices. To make optical interconnects in real system and commercial use, circuits utilizing manufacturable, robust, and low-cost technology have to be realized. Ion implanted GaAs MESFETs provide great promise due to their simplicity in manufacturing and their high speed performance. The optical characteristics of GaAs materials also make this technology favorable in realizing low-cost, high-performance OEICs.

Paper Details

Date Published: 4 April 1997
PDF: 20 pages
Proc. SPIE 3005, Optoelectronic Interconnects and Packaging IV, (4 April 1997); doi: 10.1117/12.271104
Show Author Affiliations
Wei-Heng Chang, Univ. of Illinois/Urbana-Champaign (United States)
Jinghui Mu, Univ. of Illinois/Urbana-Champaign (United States)
Mitchell D. Heins, Univ. of Illinois/Urbana-Champaign (United States)
Milton Feng, Univ. of Illinois/Urbana-Champaign (United States)
Jongwoo Kim, OptiComp Corp. (United States)
David S. McCallum, OptiComp Corp. (United States)
Richard V. Stone, OptiComp Corp. (United States)
Peter S. Guilfoyle, OptiComp Corp. (United States)


Published in SPIE Proceedings Vol. 3005:
Optoelectronic Interconnects and Packaging IV
Ray T. Chen; Peter S. Guilfoyle, Editor(s)

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