Share Email Print

Proceedings Paper

850 nm proton-implanted 8 x 8 VCSEL array design and performance measurements
Author(s): Peter S. Guilfoyle; John M. Hessenbruch; Jack L. Jewell; Henryk Temkin
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Arrays of 8 X 8 of GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs), which operate at approximately 850 nm, are being fabricated for integration with low power, optoelectronic integrated circuits. These high performance optoelectronic computing modules are being developed for high speed switching and data processing applications. The VCSEL array is a gain-guided, top-surface emitting device. It is fabricated from a GaAs/AlGaAs p-i-n distributed Bragg reflector structure, which is grown by metal organic chemical vapor deposition. The VCSEL fabrication process involves two stages of hydrogen ion implantation and three stages of metallization. A set of five photolithography masks has ben developed for VCSEL fabrication.

Paper Details

Date Published: 4 April 1997
PDF: 7 pages
Proc. SPIE 3005, Optoelectronic Interconnects and Packaging IV, (4 April 1997); doi: 10.1117/12.271102
Show Author Affiliations
Peter S. Guilfoyle, OptiComp Corp. (United States)
John M. Hessenbruch, OptiComp Corp. (United States)
Jack L. Jewell, Picolight Inc. (United States)
Henryk Temkin, Texas Tech Univ. (United States)

Published in SPIE Proceedings Vol. 3005:
Optoelectronic Interconnects and Packaging IV
Ray T. Chen; Peter S. Guilfoyle, Editor(s)

© SPIE. Terms of Use
Back to Top