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Proceedings Paper

High-performance vertical-cavity surface-emitting lasers for product applications
Author(s): Chun Lei; Lee A. Hodge; Jim J. Dudley; Mark R. Keever; Bing Liang; Jay K. Bhagat; Andrew Liao
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Paper Abstract

We report high performance 850 nm VCSELs grown by OMVPE on both n-type and p-type GaAs substrates for low cost fiber optic data communication applications. These devices are intended for use in discrete and parallel array applications at data rates up to 1.5 Gbps per channel. Good epitaxial thickness uniformity during multi-wafer growth allows low cost manufacturing and reproducible device performance. Preliminary device reliability testing shows excellent stability in VCSEL performance under accelerated stress conditions.

Paper Details

Date Published: 4 April 1997
PDF: 6 pages
Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); doi: 10.1117/12.271069
Show Author Affiliations
Chun Lei, Hewlett-Packard Co. (United States)
Lee A. Hodge, Hewlett-Packard Co. (United States)
Jim J. Dudley, Hewlett-Packard Co. (United States)
Mark R. Keever, Hewlett-Packard Co. (United States)
Bing Liang, Hewlett-Packard Co. (United States)
Jay K. Bhagat, Hewlett-Packard Co. (United States)
Andrew Liao, Hewlett-Packard Co. (United States)


Published in SPIE Proceedings Vol. 3003:
Vertical-Cavity Surface-Emitting Lasers
Kent D. Choquette; Dennis G. Deppe, Editor(s)

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