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Proceedings Paper

Cavity structures for low-loss oxide-confined VCSELs
Author(s): Kent D. Choquette; H. Roger Hadley; Weng W. Chow; Hong Q. Hou; Kent M. Geib; B. Eugene Hammons; D. Mathes; Robert Hull
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Paper Abstract

We examine the threshold characteristics of selectively oxidized VCSELs as a function of the number, thickness, and placement of the buried oxide apertures. The threshold current density for small area VCSELs is shown to increase with the number of oxide apertures in the cavity due to increased optical loss, while the threshold current density for broad area VCSELs decreases with increasing number of apertures due to more uniform current injection. Reductions of the threshold gain and optical loss are achieved for small area VCSELs using thin oxide apertures which are displaced longitudinally away from the optical cavity. We show that the optical loss can be sufficiency reduced to allow lasing in VCSELs with aperture area as small as 0.25 micrometer2.

Paper Details

Date Published: 4 April 1997
PDF: 7 pages
Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); doi: 10.1117/12.271067
Show Author Affiliations
Kent D. Choquette, Sandia National Labs. (United States)
H. Roger Hadley, Sandia National Labs. (United States)
Weng W. Chow, Sandia National Labs. (United States)
Hong Q. Hou, Sandia National Labs. (United States)
Kent M. Geib, Sandia National Labs. (United States)
B. Eugene Hammons, Sandia National Labs. (United States)
D. Mathes, Univ. of Virginia (United States)
Robert Hull, Univ. of Virginia (United States)

Published in SPIE Proceedings Vol. 3003:
Vertical-Cavity Surface-Emitting Lasers
Kent D. Choquette; Dennis G. Deppe, Editor(s)

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