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Proceedings Paper

Half-wave cavity vertical-cavity surface-emitting lasers with native oxide/GaAs lower distributed Bragg reflectors
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Paper Abstract

Data are presented on half-wave cavity vertical cavity surface emitting lasers using both oxide confinement and high contrast upper and lower distributed Bragg reflectors. Six pairs of MgF/ZnSe distributed Bragg reflectors make up the top mirror and 11 pairs of AlxOy/GaAs DBRs make up the lower DBR. The oxide layer thickness in the AlxOy/GaAs DBRs is less than a quarter-wavelength in order to reduce strain on the quantum well active region. The lasing characteristics of device sizes ranging from 7 micrometer to 1 micrometer are analyzed through spectral data, far field radiation patterns and lasing threshold.

Paper Details

Date Published: 4 April 1997
PDF: 7 pages
Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); doi: 10.1117/12.271062
Show Author Affiliations
Diana L. Huffaker, Univ. of Texas/Austin (United States)
Dennis G. Deppe, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 3003:
Vertical-Cavity Surface-Emitting Lasers
Kent D. Choquette; Dennis G. Deppe, Editor(s)

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