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Proceedings Paper

Resonant cavity LEDs by lateral epitaxy
Author(s): Michael G. Mauk; P. A. Burch; Scott W. Johnson; Zane A. Shellenbarger; James Braden McNeely; Thomas A. Goodwin; Bryan W. Feyock
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Paper Abstract

Optical cavity light-emitting diode structures with 'buried' mirrors, and their fabrication by lateral epitaxy are described. Single-crystal, high-quality epitaxial layers are formed over substrates coated with patterned, reflective masks using liquid-phase or vapor-phase epitaxial lateral overgrowth processes. The reflecting mask acts as a backside mirror and forms an optical cavity leading to enhanced external quantum efficiencies. An AlGaAs optical cavity LED incorporating a refractory metal 'buried' mirror is assessed: a greater than 3-fold increase in output optical power is measured compared to control devices with no buried mirror. Application of the epitaxial overgrowth techniques to LED structures utilizing electron-beam deposited dielectric/semiconductor 'buried' mirrors and to other semiconductor materials, such as InGaAsSb, SiC, and ZnSe is described.

Paper Details

Date Published: 4 April 1997
PDF: 8 pages
Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271051
Show Author Affiliations
Michael G. Mauk, AstroPower, Inc. (United States)
P. A. Burch, AstroPower, Inc. (United States)
Scott W. Johnson, AstroPower, Inc. (United States)
Zane A. Shellenbarger, AstroPower, Inc. (United States)
James Braden McNeely, AstroPower, Inc. (United States)
Thomas A. Goodwin, AstroPower, Inc. (United States)
Bryan W. Feyock, AstroPower, Inc. (United States)

Published in SPIE Proceedings Vol. 3002:
Light-Emitting Diodes: Research, Manufacturing, and Applications
E. Fred Schubert, Editor(s)

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