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Proceedings Paper

Planar substrate-emitting-microcavity light-emitting diodes with 20% external QE
Author(s): Hans De Neve; Johan Blondelle; Peter Van Daele; Piet M. A. Demeester; Roel G. Baets; Gustaaf Borghs
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Paper Abstract

The external QE of microcavity light emitting diodes strongly depends on the device size and operational current density. Our experiments reveal that spectral broadening of the optical spectrum emitted by the three InGaAs QWs as well as photon originally emitted into the guided mode of the cavity can explain these differences. An optimized microcavity layer design yields external QEs of 20 percent for substrate emitting light emitting diodes with diameters of 1.5 mm.

Paper Details

Date Published: 4 April 1997
PDF: 11 pages
Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271047
Show Author Affiliations
Hans De Neve, State Univ. of Ghent and Interuniv. Micro-Elektronica Centrum vzw (Belgium)
Johan Blondelle, State Univ. of Ghent (Belgium)
Peter Van Daele, State Univ. of Ghent (Belgium)
Piet M. A. Demeester, State Univ. of Ghent (Belgium)
Roel G. Baets, State Univ. of Ghent (Belgium)
Gustaaf Borghs, Interuniv. Micro-Elektronica Centrum vsw (Belgium)


Published in SPIE Proceedings Vol. 3002:
Light-Emitting Diodes: Research, Manufacturing, and Applications
E. Fred Schubert, Editor(s)

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