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Proceedings Paper

Influence of impurities on luminescence of Er-doped silicon structures
Author(s): Nikolai A. Sobolev; Oleg V. Aleksandrov; Mikhail S. Bresler; Oleg B. Gusev; Pavel E. Khakuashev; Yurii A. Kudryavtsev; Miroslav I. Makoviichuk; Yurii A. Nikolaev; Petr E. Pak; Evgenii O. Parshin; Elena I. Shek; Mikhail A. Trishenkov; Aleksey O. Zakhar'in
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Paper Abstract

The investigation of photo- and electroluminescence in erbium-doped silicon additionally co-implanted with oxygen, phosphorus and boron show an enhancement of the 1.54 micrometers line luminescence intensity in Si:Er:O and Si:Er:O:P and an intensity quenching in Si:Er:O:B as compared with Si:Er. A threshold in dependence of defect-related line electroluminescence signal on drive current is observed too. A model describing the observed variations of luminescence spectra in dependence on implantation and annealing conditions is presented. Optimization of technological regimes resulted in formation of light emitting erbium-doped silicon structures operating at room temperature.

Paper Details

Date Published: 4 April 1997
PDF: 6 pages
Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271042
Show Author Affiliations
Nikolai A. Sobolev, Ioffe Physical-Technical Institute (Russia)
Oleg V. Aleksandrov, Svetlana-Semiconductor (Russia)
Mikhail S. Bresler, Ioffe Physical-Technical Institute (Russia)
Oleg B. Gusev, Ioffe Physical-Technical Institute (Russia)
Pavel E. Khakuashev, Scientific and Manufacturing Enterprise Orion (Russia)
Yurii A. Kudryavtsev, Ioffe Physical-Technical Institute (Russia)
Miroslav I. Makoviichuk, Institute of Microelectronics (Russia)
Yurii A. Nikolaev, Ioffe Physical-Technical Institute (Russia)
Petr E. Pak, Ioffe Physical-Technical Institute (Russia)
Evgenii O. Parshin, Institute of Microelectronics (Russia)
Elena I. Shek, Ioffe Physical-Technical Institute (Russia)
Mikhail A. Trishenkov, Scientific and Manufacturing Enterprise Orion (Russia)
Aleksey O. Zakhar'in, Svetlana-Semiconductor (Russia)


Published in SPIE Proceedings Vol. 3002:
Light-Emitting Diodes: Research, Manufacturing, and Applications
E. Fred Schubert, Editor(s)

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