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Proceedings Paper

Pulsed electrochemical etching of InGaN/GaN LED material
Author(s): Jeong Seok O; Peter S. Zory; David P. Bour
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Paper Abstract

A pulsed electrochemical technique for etching MOCVD-grown InGaN/GaN light-emitting diode material at room temperature is reported. The p-GaN and InGaN layers can be etched away in minutes providing access to the n-GaN layer below. Movement of the etch front through the p-n junction region can be observed by monitoring changes in the current pulse shape with time on an oscilloscope.

Paper Details

Date Published: 4 April 1997
PDF: 4 pages
Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271037
Show Author Affiliations
Jeong Seok O, Univ. of Florida (United States)
Peter S. Zory, Univ. of Florida (United States)
David P. Bour, Agilent Technologies (United States)


Published in SPIE Proceedings Vol. 3002:
Light-Emitting Diodes: Research, Manufacturing, and Applications
E. Fred Schubert, Editor(s)

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