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Proceedings Paper

Low-temperature poly-Si TFT mass production system: CMD-450 poly
Author(s): Kazumasa Ito; J. Togawa; T. Yonezaki; M. Hashimoto; Michio Ishikawa; Y. Ota
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Paper Abstract

Low temperature poly-Si TFT mass production plan has been announced recently. However, techniques for depositing poly- Si film and gate SiO2 film, which provide the possibilities of mass production including that of large- sized substrate and film characteristics to obtain satisfactory TFT characteristics simultaneously, have not yet been established. ULVAC has developed techniques that can be applied to mass production of poly-Si film and gate SiO2 film and has completed a single-substrate PECVD system called CMD-450 poly based on these techniques. Excellent repeatability of film characteristics and film thickness uniformity. The low-hydrogen concentration PECVD a-Si and TEOS-SiO2 film mentioned below were obtained by using this system.

Paper Details

Date Published: 10 April 1997
PDF: 6 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270296
Show Author Affiliations
Kazumasa Ito, Ulvac Japan, Ltd. (Japan)
J. Togawa, Ulvac Japan, Ltd. (Japan)
T. Yonezaki, Ulvac Japan, Ltd. (Japan)
M. Hashimoto, Ulvac Japan, Ltd. (Japan)
Michio Ishikawa, Ulvac Japan, Ltd. (Japan)
Y. Ota, Ulvac Japan, Ltd. (Japan)


Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)

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