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Proceedings Paper

Enhanced hydrogenation in polycrystalline Si thin films using ultrasound treatment
Author(s): Sergei Ostapenko; Yaroslav Koshka; Lubek Jastrzebski; Ronald K. Smeltzer
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Paper Abstract

Ultrasound treatment (UST) was applied to improve electronic properties of polycrystalline silicon films on glass. A strong decrease of sheet resistance was observed in plasma hydrogenated films at UST temperatures lower than 100 degrees C. An enhanced passivation of grain boundary defects after UST was directly measured by nano-scale contact potential difference with atomic force microscope. These strong UST effects are accompanied by improvement of hydrogenation homogeneity as confirmed by spatially resolved photoluminescence study. We also observed a dramatic increase of intra-red photoluminescence (PL) intensity by a factor of two orders of magnitude after a few minutes of UST at elevated temperatures up to 280 degrees C. IN films obtained by solid-phase crystallization of (alpha) -Si, UST activates a new PL maximum at 0.9eV related to the amorphous fraction of poly-Si films. A new mechanism of ultrasound stimulated hydrogenation of dangling bonds in polycrystalline and amorphous Si films is proposed. UST processing was also applied to plasma hydrogenated poly-Si thin film transistors. We found UST stimulated reduction of a leakage current and shift of a threshold voltage, which can be beneficial for AMLCD applications.

Paper Details

Date Published: 10 April 1997
PDF: 8 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270294
Show Author Affiliations
Sergei Ostapenko, Univ. of South Florida (United States)
Yaroslav Koshka, Univ. of South Florida (United States)
Lubek Jastrzebski, Univ. of South Florida (United States)
Ronald K. Smeltzer, David Sarnoff Research Ctr. (United States)

Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)

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