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Proceedings Paper

Polysilicon TFTs for AMLCD applications with gate oxides grown in a low-temperature N2O plasma
Author(s): Robert S. Howell; Sita R. Kaluri; Miltiadis K. Hatalis; Dennis W. Hess
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Paper Abstract

It has been reported that single crystal silicon transistors whose gate oxides were grown in N2O or treated to a post oxidation anneal in N2O demonstrated better resiliency under electrical stress. However, normal oxidation in single crystal silicon processing to form gate oxides is incompatible with the low temperature processes required for polysilicon TFTs designed for AMLCDs. In this work, we have used our previously reported process for a double layer gate oxidation, the bottom layer being a grown oxide formed in a low temperature, high density oxygen plasma and the top layer being a deposited oxide, to build the first low temperature polysilicon TFTs with a nitrogen passivated oxide/polysilicon interface. Our devices were constructed with the bottom 10 nm layer of gate oxide being grown in either an N2O or an O2 plasma, followed by a deposition of 100 nm of SiO2 by PECVD. The devices were then subjected to prolonged periods of stress at Vds equals Vgs equals 20 V. While having similar pre-stress device characteristics, the devices made with the oxide grown in the N2O plasma demonstrated a greater degree of stability than those with an oxide grown in an oxide grown in an O2 plasma.

Paper Details

Date Published: 10 April 1997
PDF: 6 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270293
Show Author Affiliations
Robert S. Howell, Lehigh Univ. (United States)
Sita R. Kaluri, Lehigh Univ. (United States)
Miltiadis K. Hatalis, Lehigh Univ. (United States)
Dennis W. Hess, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)

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