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Proceedings Paper

Cost modeling of low-temperature large-area polysilicon thin film transistor liquid crystal display manufacturing
Author(s): Steven Jurichich; Samuel C. Wood; Krishna C. Saraswat
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Paper Abstract

The potential to integrate the scan and data driver circuitry and thereby reduce the cost of active-matrix liquid-crystal displays (AM-LCDs) has been one of the major reasons for pursuing a low-temperature poly-Si thin-film transistor (TFT) technology. Improvements in low-temperature large-area processing technologies have made poly-Si TFT technology compatible with conventional amorphous-Si substrates. We examine the cost of manufacturing poly-Si TFT LCDs for 10-in. SVGA resolution color displays. We present a detailed cost analysis of manufacturing a low-temperature poly-Si TFT LCD with integrated drivers including the operating costs of manufacturing. The cost per display for manufacturing plants running amorphous-Si and poly-Si TFT processes at their minimum efficient scale are compared. A cumulative Poisson yield model is presented which takes into account the additional area and process steps requirements for a poly-Si TFT process with integrated drivers. The overall poly-Si AM-LCD manufacturing cost is lower despite having a higher front-end TFT array manufacturing cost due to the additional complexity of fabricating CMOS drivers as well as the lower TFT yield. Our results indicate that low- temperature poly-Si AM-LCDs with integrated drivers will be cost competitive with a-Si AM-LCDs.

Paper Details

Date Published: 10 April 1997
PDF: 6 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270291
Show Author Affiliations
Steven Jurichich, Stanford Univ. (United States)
Samuel C. Wood, Stanford Univ. (United States)
Krishna C. Saraswat, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)

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