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Proceedings Paper

Growth and characterization of Nd:YAG epitaxial planar waveguides by pulsed laser deposition
Author(s): Mizunori Ezaki; Minoru Obara; Kyoichi Adachi; Hiroshi Kumagai; Koichi Toyoda
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Paper Abstract

Epitaxial rare-earth (Re: Nd, Yb) doped yttrium aluminum garnet (Rex:Y3-xAl5O12 or Re:YAG) films have been grown on various substrates by pulsed laser deposition for the purpose of fabricating diode-pumped waveguide lasers. The films were characterized by Rutherford backscattering, x- ray diffraction, and photo-luminescence measurements. These Nd:YAG films on (100) silicon substrate having a large lattice mismatch show oriented stoichiometric growth. On the other hand, the films of rare-earth doped YAG on garnet substrates show the epitaxial growth with the smooth surfaces. Their characterization of rare-earth doped YAG thin films on various substrates was comparable to that of the Nd:YAG bulk laser crystal.

Paper Details

Date Published: 4 April 1997
PDF: 4 pages
Proc. SPIE 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, (4 April 1997); doi: 10.1117/12.270235
Show Author Affiliations
Mizunori Ezaki, Keio Univ. (Japan)
Minoru Obara, Keio Univ. (Japan)
Kyoichi Adachi, Keio Univ. (Japan)
Hiroshi Kumagai, RIKEN--The Institute of Physical and Chemical Research (Japan)
Koichi Toyoda, RIKEN--The Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 3092:
XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference
Denis R. Hall; Howard J. Baker, Editor(s)

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