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Proceedings Paper

Electrical behavior of laser damaged silicon photodiodes
Author(s): Jean-Pierre Moeglin; Bernard Gautier; Rene C. Joeckle
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Paper Abstract

A measurement of the electrical parameters degradation of Si photodiodes irradiated by laser visible light has been performed. The laser is a q-switched Nd:YAG, frequency doubled, operated in single pulse mode of 4 ns duration. The applied fluence levels range up to 90 J/cm2. Two kinds of irradiation process have been applied: either a part of the detector active area has been irradiated in single pulse mode, or a scanning of the whole detector active area has been performed with successive identical pulses. It has been shown that the fluence necessary to induce significant changes (local decrease of 35%) in responsivity is several times the surface melting threshold fluence (0.5 J/cm2). Conversely, the dark current is the most sensitive parameter, it increases by about four magnitudes for high irradiation. The in-depth dopant distribution is altered by high fluence irradiation in a way that cannot be explained by simple thermal modelization.

Paper Details

Date Published: 4 April 1997
PDF: 4 pages
Proc. SPIE 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, (4 April 1997); doi: 10.1117/12.270159
Show Author Affiliations
Jean-Pierre Moeglin, Deutsch-Franzoesisches Forschungsinstitut (France)
Bernard Gautier, ISL (France)
Rene C. Joeckle, ISL (France)


Published in SPIE Proceedings Vol. 3092:
XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference

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