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Proceedings Paper

Polyurethane resins as resist materials for excimer ablation lithography (EAL)
Author(s): Nobuaki Hayashi; Kenkichi Suzuki; Masaaki Matsuda; Toshio Ogino; Yoshifumi Tomita
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Paper Abstract

The excimer laser ablation lithography (EAL) is a process of direct patterning and removal of a resist film by photo- decomposition ablation. Taking advantage of EAL process, we have tried to apply this process to LCD fabrication. As the most fundamental problem for resist materials is the ablation rate, we have examined to measure the ablation rates of many kinds of polymers. AMong them the most promising is the polyurethane (PU) which is synthesized from toluenediisocyanate and poly derivatives in chlorobenzene solution. The ablation rate at 100 mJ/cm2 fluence of 248 nm is more than 0.05 micrometers /shot, which is the highest value of all the materials that we have examined. Through the investigations of structures of PU, we could elucidate the mechanisms of the high ablation rate, and accordingly the molecular design concept of the ablation resist.

Paper Details

Date Published: 31 March 1997
PDF: 6 pages
Proc. SPIE 2992, Excimer Lasers, Optics, and Applications, (31 March 1997); doi: 10.1117/12.270090
Show Author Affiliations
Nobuaki Hayashi, Hitachi, Ltd. (Japan)
Kenkichi Suzuki, Hitachi, Ltd. (Japan)
Masaaki Matsuda, Hitachi, Ltd. (Japan)
Toshio Ogino, Hitachi, Ltd. (Japan)
Yoshifumi Tomita, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 2992:
Excimer Lasers, Optics, and Applications
Harry Shields; Peter E. Dyer, Editor(s)

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