Share Email Print
cover

Proceedings Paper

Thermal stable laser-produced low-ohmic contact to nanometer p-GaAs layers of barrier structures for fast optoelectronic devices
Author(s): S. V. Baranetz; S. P. Dikiy; Leonid L. Fedorenko; E. B. Kaganovich; Sergey V. Svechnikov; V. A. Antonov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Nonalloyed W-Zn compound based ohmic contact to p-type GaAs were obtained by vacuum pulse YAG-laser deposition of W/Zn/W/GaAs structure and by laser stimulated impurity Zn diffusion for forming of the submicron contact structure. Pulse laser modification processes were controlled by the pyrodetector system. High level of impurity concentration NZn allowed to form the p+-p GaAs layers. The W layers provided the drastic boundaries of contact layers and its thermal stability. The typical Rc value of 2.10-5 (Omega) .cm2 obtained for the W/Zn/W/GaAs remained stable after 400 degrees Celsius annealing and after 150 ma current testing during 100 hours.

Paper Details

Date Published: 6 February 1997
PDF: 5 pages
Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266824
Show Author Affiliations
S. V. Baranetz, Institute of the Semiconductor Physics (Ukraine)
S. P. Dikiy, Institute of the Semiconductor Physics (Ukraine)
Leonid L. Fedorenko, Institute of the Semiconductor Physics (Ukraine)
E. B. Kaganovich, Institute of the Semiconductor Physics (Ukraine)
Sergey V. Svechnikov, Institute of the Semiconductor Physics (Ukraine)
V. A. Antonov, Institute of the Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2968:
Optical Organic and Semiconductor Inorganic Materials
Edgar A. Silinsh; Arthur Medvids; Andrejs R. Lusis; Andris O. Ozols, Editor(s)

© SPIE. Terms of Use
Back to Top