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Proceedings Paper

Joining of semiconductive n-BaTiO3 with Si single-crystal, electrical, and optical properties
Author(s): S. Sugihara; T. Andoh; S. Suzuki
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Paper Abstract

Semiconductive n-BaTiO3 film on Si single crystal (100) was studied on the electrical optical properties by solar beam and its simulator. The film was spin-coated on the Si with a buffer layer in which Pt or Ceramace G (commercial name -- SnO and Sb2O3 as the base materials) was employed. The electrode Pt or Ceramace G was put on the film as the top one and Ag for the lower one. The temperature for joining of the film and Si were 700, 800 and 1000 degrees Celsius. The solar beam irradiated on the film to measure the photovoltage and photocurrent and also transmittance of the film on the glass was investigated. Furthermore, the interfaces between n-BaTiO3 film and Si were discussed by the results of electron probe microanalyzer and the microstructures were also reported.

Paper Details

Date Published: 4 February 1997
PDF: 8 pages
Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997); doi: 10.1117/12.266531
Show Author Affiliations
S. Sugihara, Shonan Institute of Technology (Japan)
T. Andoh, Shonan Institute of Technology (Japan)
S. Suzuki, Shonan Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 2967:
Optical Inorganic Dielectric Materials and Devices
Andris Krumins; Donats K. Millers; Andris R. Sternberg; Janis Spigulis, Editor(s)

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