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Proceedings Paper

Mechano-activated processes on metal oxide interfaces at room temperature
Author(s): Faina Muktepavela
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Paper Abstract

Solid state bonding of metal with oxide at room temperature have been studied. The properties of Al/SiO2, Al/glass, Al/MgO, Mg/SiO2, In/glass interfaces as well as to ascertain the mechanism of formation of interfaces. Structure, composition and mechanical properties were investigated using auger-spectroscopy (AES), secondary-ion mass-spectrometry (SIMS), electron microscopy and precision microindentation. The results showed marked adhesion not all over contact area but only at zones of the maximum shear stress. The effect of mechanoactivation is considered from the viewpoints of both structure formation and physico- chemical interaction of nonequilibrium systems. As a result of relaxation, formation of a narrow metal/O reaction zone spreading in the metal and being characterized by oxygen concentration gradient occurred. The reaction zone exhibits high hardness and brittleness in comparison with those of pure metals.

Paper Details

Date Published: 4 February 1997
PDF: 4 pages
Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997); doi: 10.1117/12.266522
Show Author Affiliations
Faina Muktepavela, Univ. of Latvia (Latvia)


Published in SPIE Proceedings Vol. 2967:
Optical Inorganic Dielectric Materials and Devices
Andris Krumins; Donats K. Millers; Andris R. Sternberg; Janis Spigulis, Editor(s)

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