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Proceedings Paper

Femtosecond photoelectron spectroscopy of II-VI and III-V semiconductors
Author(s): M. Leblans; R. K. R. Thoma; J. L. LoPresti; Michael Reichling; Richard T. Williams
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Paper Abstract

Photoelectron spectra resulting from sequential or simultaneous absorption of two or three photons have been studied for ZnTe(110), ZnSe(110), and GaP(110) surfaces, with time resolution of the relaxation of carriers between the first and subsequent steps of excitation. Under 2.95 eV excitation and probing with 5.9 eV photons on ZnTe(110), we were able to follow the thermalization of conduction electrons, the subsequent trapping of electrons by surface defect states in the band gap, and the gradual relaxation toward defect states closer to the Fermi level. On GaP(110), the relaxation of photoexcited electrons and holes was studied by means of two-photon and three-photon photoelectron emission under 3.16 eV photon excitation.

Paper Details

Date Published: 4 February 1997
PDF: 8 pages
Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997); doi: 10.1117/12.266507
Show Author Affiliations
M. Leblans, Wake Forest Univ. (USA) and Univ. of Antwerp (Belgium)
R. K. R. Thoma, Wake Forest Univ. (United States)
J. L. LoPresti, Wake Forest Univ. (United States)
Michael Reichling, Freie Univ. Berlin (Germany)
Richard T. Williams, Wake Forest Univ. (United States)

Published in SPIE Proceedings Vol. 2967:
Optical Inorganic Dielectric Materials and Devices
Andris Krumins; Donats K. Millers; Andris R. Sternberg; Janis Spigulis, Editor(s)

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