Share Email Print

Proceedings Paper

High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions
Author(s): Hui Nie; K. Alex Anselm; C. Hu; Ben G. Streetman; Joe C. Campbell
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The performance of conventional photodiodes is limited by an intrinsic tradeoff between quantum efficiency and bandwidth. We have successfully demonstrated that resonant-cavity photodiodes can simultaneously achieve high quantum efficiency and wide bandwidth. The resonant-cavity approach lengthens the effective absorption thickness through multiple reflections between two parallel mirrors. Previously, it has been shown that resonant-cavity, separate-absorption-and-multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (approximately 75%), low dark current and low bias voltage (less than 15 volts). In this paper, we describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved. Also, low multiplication noise characteristics (0.2 less than k less than 0.3) are reported.

Paper Details

Date Published: 22 January 1997
PDF: 4 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264252
Show Author Affiliations
Hui Nie, Univ. of Texas/Austin (United States)
K. Alex Anselm, Univ. of Texas/Austin (United States)
C. Hu, Univ. of Texas/Austin (United States)
Ben G. Streetman, Univ. of Texas/Austin (United States)
Joe C. Campbell, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

© SPIE. Terms of Use
Back to Top