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Proceedings Paper

Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product
Author(s): Weishu Wu; Aaron R. Hawkins; John Edward Bowers
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Paper Abstract

In an InGaAs/Si avalanche photodetector (APD), Si is used as the multiplication material to provide avalanche gain, while InGaAs is used as the absorption material. High quantum efficiency, high gain-bandwidth product, and low noise for detection of wavelengths between 1.0 micrometer and 1.6 micrometer can be achieved in this way. We present possible design variations and analyze the performance of these APDs. Particular attention is paid to a 10 Gbit/s APD and we design InGaAs/Si APDs with a 3-dB bandwidth larger than 10 GHz and a gain-bandwidth product greater than 400 GHz.

Paper Details

Date Published: 22 January 1997
PDF: 10 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264251
Show Author Affiliations
Weishu Wu, Univ. of California/Santa Barbara (United States)
Aaron R. Hawkins, Univ. of California/Santa Barbara (United States)
John Edward Bowers, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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