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Proceedings Paper

Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 um on GaAs substrates
Author(s): Kwok Kwong Loi; Lei Shen; Harry H. Wieder; William S. C. Chang
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Paper Abstract

A novel InGaAs/InAlAs multiple-quantum-well electroabsorption waveguide modulator operating at 1.3 micrometer wavelength has been designed and fabricated for the first time on a GaAs substrate The high-frequency performance of the modulator in an amplifierless rf fiber- optic link is described.

Paper Details

Date Published: 22 January 1997
PDF: 7 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264250
Show Author Affiliations
Kwok Kwong Loi, Univ. of California/San Diego (United States)
Lei Shen, Univ. of California/San Diego (United States)
Harry H. Wieder, Univ. of California/San Diego (United States)
William S. C. Chang, Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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