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Proceedings Paper

GaAs/AlGaAs traveling-wave electro-optic modulators
Author(s): Ralph Spickermann; Steve Sakamoto; Nadir Dagli
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Paper Abstract

A GaAs/AlGaAs traveling wave Mach-Zehnder electro-optic modulator with novel slow wave electrodes was fabricated on undoped epitaxial layers. Using appropriate electrode engineering velocity matching with matched impedance and low microwave loss was achieved. Device had a measured electrical bandwidth greater than 40 GHz at 1.55 micrometer. The measured bandwidth at 1.3 micrometer was 37 GHz. The mechanism limiting the bandwidth was identified as phase velocity matching rather than group velocity matching.

Paper Details

Date Published: 22 January 1997
PDF: 8 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264228
Show Author Affiliations
Ralph Spickermann, Univ. of California/Santa Barbara (United States)
Steve Sakamoto, Univ. of California/Santa Barbara (United States)
Nadir Dagli, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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