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Proceedings Paper

Laser devices by selective-area epitaxy
Author(s): Robert M. Lammert; James J. Coleman
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Paper Abstract

The design and operation of strained-laser InGaAs-GaAs laser sources fabricated by selective-area epitaxy (SAE) are presented. These devices include lasers with low threshold currents, lasers with nonabsorbing mirrors, and dual channel sources. The low threshold lasers have threshold currents as low as 2.65 mA for an uncoated device and 0.97 mA for a coated device. The lasers with nonabsorbing mirrors exhibited optical powers up to approximately 325 mW/facet (4 micrometer wide output aperture), which is a greater than 40% increase over conventional SAE lasers. The dual channel source is capable of coupling two discrete optical sources into a single mode fiber without the need for an external coupler.

Paper Details

Date Published: 22 January 1997
PDF: 13 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264213
Show Author Affiliations
Robert M. Lammert, Univ. of Illinois/Urbana-Champaign (United States)
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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