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Proceedings Paper

Progress in normal-incidence III-V quantum well infrared photodetectors
Author(s): Elias Towe; R. H. Henderson; Stephen W. Kennerly
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Paper Abstract

Intersubband transitions in GaAs/(Al,Ga)As quantum wells have been successfully used in the design of novel infrared detectors for over a decade now. Both conduction- and valence-band based detectors have been investigated. In general, the conduction-band based detectors fabricated from direct gap GaAs/(Al,Ga)As heterostructures are not sensitive to normal-incidence light. This is a consequence of the quantum mechanical rules that govern light absorption in these structures. In order to detect normal-incidence light, a grating structure which scatters the incident light into higher order, transverse magnetic modes is used. To avoid the use of gratings, research is being carried out in (In,Ga,Al)As/(Al,Ga)As conduction-band quantum well structures that can absorb normal-incidence light. This paper reviews recent progress in such detectors.

Paper Details

Date Published: 22 January 1997
PDF: 12 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264206
Show Author Affiliations
Elias Towe, Univ. of Virginia (United States)
R. H. Henderson, Middle Tennessee State Univ. (United States)
Stephen W. Kennerly, Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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