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Proceedings Paper

High-efficiency and high-speed metal-semiconductor-metal photodetectors on Si-on-insulator substrates with buried backside reflectors
Author(s): Erli Chen; Stephen Y. Chou
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Paper Abstract

We report Si metal-semiconductor-metal photodetectors with high-efficiency and high-speed in the infrared using Si-on- insulator substrates with backside reflectors buried underneath a deep-submicron-thick active layer. The reflectors cause the trapping of the light inside the thin Si active layer, resulting in a fast and efficient carrier- collection by the electrodes. The impulse response of the photodetector, measured by electro-optic sampling at 780 nm wavelength, has a full width at half-maximum of 5.4 ps, corresponding to a 3-dB bandwidth of 82 GHz. At both 633 and 850 nm wavelengths, the responsivities of the photodetectors with the buried backside reflectors are at least an order of magnitude larger than that of those without the reflectors.

Paper Details

Date Published: 22 January 1997
PDF: 9 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264205
Show Author Affiliations
Erli Chen, Univ. of Minnesota/Twin Cities (United States)
Stephen Y. Chou, Univ. of Minnesota/Twin Cities (United States)


Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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