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Proceedings Paper

GaAs metal-semiconductor-metal photodector mixers for microwave single-sideband modulation
Author(s): Gordon Wood Anderson; L. Eugene Chipman; Francis J. Kub; Doewon Park; Michael Y. Frankel; Thomas F. Carruthers; John A. Modolo; Karl D. Hobart; D. Scott Katzer
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Paper Abstract

A new optical technique for microwave single sideband modulation is reported. It uses metal-semiconductor-metal Schottky photodiodes formed in a GaAs/Al0.3Ga0.7As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single sideband modulation of the microwave signal, rf and undesired-sideband suppression of 36 dB and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors is greater than or equal to 29 GHz.

Paper Details

Date Published: 22 January 1997
PDF: 6 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264204
Show Author Affiliations
Gordon Wood Anderson, Naval Research Lab. (United States)
L. Eugene Chipman, Naval Research Lab. (United States)
Francis J. Kub, Naval Research Lab. (United States)
Doewon Park, Naval Research Lab. (United States)
Michael Y. Frankel, Naval Research Lab. (United States)
Thomas F. Carruthers, Naval Research Lab. (United States)
John A. Modolo, Naval Research Lab. (United States)
Karl D. Hobart, Naval Research Lab. (United States)
D. Scott Katzer, Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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