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Proceedings Paper

Photoelectroluminescent electric field intensity sensor
Author(s): Tadeusz Pustelny
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Paper Abstract

The possibility of using electroluminescent semiconductors of the II-VI group to be used in the construction of the electric field intensity sensors is discussed. The idea of contact-free method of the electric field intensity measurement is based on the influence of electric field on optical properties of electroluminescent ZnS:Mn and ZnS+CdS:Mn semiconductors. The sensors presented do not belong to the group of intensity sensors. These luminescent fiber optic sensors are going to be applied in the future in high voltage electric equipment.

Paper Details

Date Published: 23 January 1997
PDF: 6 pages
Proc. SPIE 2998, Photosensitive Optical Materials and Devices, (23 January 1997); doi: 10.1117/12.264198
Show Author Affiliations
Tadeusz Pustelny, Silesian Technical Univ. (Poland)


Published in SPIE Proceedings Vol. 2998:
Photosensitive Optical Materials and Devices
Mark P. Andrews, Editor(s)

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