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Proceedings Paper

Modification of the properties of silica glasses by ion implantation
Author(s): John L. Brebner; Louis B. Allard; Marc Verhaegen; Mourad Essid; Jacques Albert; Peter Simpson; Andrew P. Knights
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Paper Abstract

High energy MeV ion implantation of fused silica and Ge- doped silica renders these materials photosensitive. The physical processes involved are closely related to the photosensitization of Ge-doped silica by UV irradiation but present certain characteristics that are different. We discuss the results of studied of the induced absorption and refractive index changes under different preparation conditions, annealing sequences and subsequent bleaching by ArF and KrF excimer radiation. We include the results of a study using positron annihilation spectroscopy of the defects introduced by ion implantation and subsequent annealing and bleaching.

Paper Details

Date Published: 23 January 1997
PDF: 10 pages
Proc. SPIE 2998, Photosensitive Optical Materials and Devices, (23 January 1997); doi: 10.1117/12.264173
Show Author Affiliations
John L. Brebner, Univ. de Montreal (Canada)
Louis B. Allard, Univ. de Montreal (Canada)
Marc Verhaegen, Univ. de Montreal (Canada)
Mourad Essid, Univ. de Montreal (Canada)
Jacques Albert, Communications Research Ctr. (Canada)
Peter Simpson, Univ. of Western Ontario (Canada)
Andrew P. Knights, Univ. of Western Ontario (Canada)

Published in SPIE Proceedings Vol. 2998:
Photosensitive Optical Materials and Devices
Mark P. Andrews, Editor(s)

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