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Proceedings Paper

Numerical simulation of a/uc-Si:H p-i-n photodiode under nonuniform illumination: a 2D transport problem
Author(s): Alessandro Fantoni; Manuela Vieira; J. Cruz; Rodrigo Martins
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Paper Abstract

We report here about a computer simulation program, based on a comprehensive physical and numerical model of an a/(mu) c- Si:H p-i-n device, applied to the 2D problem of describing the transport properties within the structure under non- uniform illumination. The continuity equations for holes and electrons together with Poisson's equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The basic semiconductor equations are implemented with a recombination mechanism reflecting the microcrystalline structure of the different layers. The lateral effects occurring within the structure, due to the non-uniformity of the radiation are outlined. The simulation results obtained for different wavelengths of the incident light are compared and shown their dependence on the energy of the radiation. The results of simulating a p- i-n (mu) c-Si:H junctions under non-uniform illumination is that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation.

Paper Details

Date Published: 23 January 1997
PDF: 10 pages
Proc. SPIE 2997, Integrated Optics Devices: Potential for Commercialization, (23 January 1997); doi: 10.1117/12.264153
Show Author Affiliations
Alessandro Fantoni, Univ. Nova de Lisboa (Portugal)
Manuela Vieira, Univ. Nova de Lisboa (Portugal)
J. Cruz, Univ. Nova de Lisboa (Portugal)
Rodrigo Martins, Univ. Nova de Lisboa (Portugal)


Published in SPIE Proceedings Vol. 2997:
Integrated Optics Devices: Potential for Commercialization
S. Iraj Najafi; Mario Nicola Armenise, Editor(s)

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