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Proceedings Paper

High-power InAsSb/InAsSbP laser diodes emitting at 3- to 5-um range
Author(s): Manijeh Razeghi; Jacqueline E. Diaz; Hyuk Jong Yi; D. Wu; B. Lane; Adam Rybaltowski; Y. H. Xiao; Harry Jeon
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Paper Abstract

We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 micrometers and light emitting diodes up to 5 micrometers . Maximum output power up to 1 W was obtained from a MQW laser with stripe width of 100 micrometers and cavity length of 700 micrometers for emitting wavelength of 3.6 micrometers at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78K were achieved from the double- heterostructure lasers emitting at 3.2 micrometers . The far-field beam divergence as narrow as 24 degrees was achieved with the sue of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

Paper Details

Date Published: 23 January 1997
PDF: 11 pages
Proc. SPIE 2997, Integrated Optics Devices: Potential for Commercialization, (23 January 1997); doi: 10.1117/12.264148
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Jacqueline E. Diaz, Northwestern Univ. (United States)
Hyuk Jong Yi, Northwestern Univ. (United States)
D. Wu, Northwestern Univ. (United States)
B. Lane, Northwestern Univ. (United States)
Adam Rybaltowski, Nortewestern Univ. (United States)
Y. H. Xiao, Northwestern Univ. (United States)
Harry Jeon, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 2997:
Integrated Optics Devices: Potential for Commercialization
S. Iraj Najafi; Mario Nicola Armenise, Editor(s)

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